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* Switching Regulators * Inverters * Solenoid and Relay Drivers * Motor Controls * Deflection Circuits Fast Turn-Off Times 60 ns Inductive Fall Time -- 25_C (Typ) 120 ns Inductive Crossover Time -- 25_C (Typ) Operating Temperature Range -65 to + 200_C 100_C Performance Specified for:
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The BUX 48/BUX 48A transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated SWITCHMODE applications such as:
SWITCHMODE is a trademark of Motorola, Inc.
SWITCHMODE II Series NPN Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation -- TC = 25_C -- TC = 100_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) -- Overload Emitter Base Voltage Collector-Emitter Voltage (VBE = - 1.5 V) Collector-Emitter Voltage
Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltage Leakage Currents (125_C)
Characteristic
Rating
v 10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VCEX
RJC
VEB
IC ICM IOI
IB IBM
PD
TL
BUX48
850
400
- 65 to + 200
15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V(BR)CEO 850 - 1000 VOLTS V(BR)CEX 175 WATTS
Max
275
175 100 1
BUX48 BUX48A
5 20
15 30 60
1
7
Order this document by BUX48/D
CASE 1-07 TO-204AA (TO-3)
BUX48A
1000
450
3-401
Watts
_C/W
W/_C Unit Unit Adc Adc Vdc Vdc Vdc
_C _C
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IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
BUX48 BUX48A
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle Vcl = 300 V, VBE(off) = 5 V, Lc = 180H Inductive Load, Clamped (Table 1) SWITCHING CHARACTERISTICS Resistive Load (Table 1) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
3-402
Fall Time Crossover Time Storage Time Fall Time Storage Time Fall Time Storage Time Rise Time Delay Time Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) (IC = 8 Adc, IB = 1.6 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 15 Adc, IB = 3 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) (IC = 8 Adc, IB = 1.6 Adc) (IC = 12 Adc, IB = 2.4 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter-Base Breakdown Voltage (IE = 50 mA - IC = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEX, RBE = 10 ) Collector Cutoff Current (VCEX = Rated Value, VBE(off) = 1.5 Vdc) (VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) L = 25 mH IC = 10 A, IB = 2 A IC = 8 A, IB = 1.6 A Duty Cycle = 2%, VBE(off) = 5 V Tp = 30 s, VCC = 300 V IC = 10 A IB1 = 2 A IC = 8 A IB1 = 1.6 A Characteristic
v 2%.
BUX48
BUX48A
(TC = 100_C) _C)
BUX48A
BUX48A
BUX48
BUX48 BUX48A
BUX48
BUX48 BUX48A
TC = 25_C TC = 125_C
BUX48 BUX48A
(TC = 25_C)
VCEO(sus)
V(BR)EBO
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICER ICEX Cob hFE IS/b tsv tsv td tfi tfi tr tf tc ts Min 400 450 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8 8 7 See Figure 13 See Figure 12 0.17 0.06 Typ 0.3 1.5 1.3 0.2 1.3 0.4 0.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.35 Max 350 0.6 2.5 0.4 0.7 0.2 1.6 1.6 1.6 1.6 1.5 5 2 1.5 5 2 0.1 0.5 3 0.2 2 -- -- -- -- -- -- -- 2 mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc pF s s
BUX48 BUX48A
DC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 30 hFE, DC CURRENT GAIN 20 10% 10 7 5 3 2 VCE = 5 V 1 1 2 3 5 8 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 90% 10 5 3 IC = 5 A 7.5 A 10 A 15 A
1
0.5 0.3 TC = 25C 0.1 0.1 0.3 0.5 1 IB, BASE CURRENT (AMPS) 2 3 4
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 3 2 1 0.7 0.5 0.3 0.2 0.1
90% 10%
VBE, BASE-EMITTER VOLTAGE (VOLTS)
f = 5
2 1 0.7 0.5 0.3 TJ = 25C TJ = 100C
1
2
3
5
7
10
20
30
50
0.1
0.3
1
3
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Voltage
104 VCE = 250 V IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 101 100 25C 10-1 - 0.4 - 0.2 0 0.2 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.6 125C 100C 75C REVERSE FORWARD C, CAPACITANCE (pF)
10 k Cib
1k
100
Cob
TJ = 25C 10 1 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3-403
BUX48 BUX48A
Table 1. Test Conditions for Dynamic Performance
VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
INPUT CONDITIONS
33 2W +10 V 20 0 2 PULSES = 3% PW Varied to Attain IC = 200 mA 680 pF 100 33 2W 1 220 100 MM3735
D1 160
22 F D3
+10 V 2N6438 MR854 2 IB1 Ib1 ADJUST 0.1 F Ib2 ADJUST dTb ADJUST MR854 2N6339 VCC IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. TURN-ON TIME 1
680 pF
22
D1 D2 D3 D4 1N4934 680 pF 2N3763 160 D3 0.22 F 22 D4
CIRCUIT VALUES
Lcoil = 25 mH, VCC = 10 V Rcoil = 0.7
Lcoil = 180 H Rcoil = 0.05 VCC = 20 V
Vclamp = 300 V RB ADJUSTED TO ATTAIN DESIRED IB1
VCC = 300 V RL = 83 Pulse Width = 10 s
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS IC t1 Adjusted to Obtain IC Lcoil (IC ) pk t1 VCC Lcoil (IC ) pk t2 VClamp Test Equipment Scope -- Tektronix 475 or Equivalent
RESISTIVE TEST CIRCUIT
TEST CIRCUITS
TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1
Rcoil Lcoil VCC VCE
IC(pk) t1 tf
tf Clamped t
TUT 1 2 RL VCC
VCE or Vclamp TIME t2
t
IC pk 90% VCE(pk) IC tsv trv tc VCE IB 10% VCE(pk) 90% IB1
10 VCE(pk) IB2(pk) , BASE CURRENT (AMPS) 90% IC(pk) tfi tti 8 f = 5 IC = 10 A
6
10% IC pk
4
2% IC
2
0 TIME
0
1
2
3
4
5
6
VBE(off), BASE-EMITTER VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
Figure 8. Peak-Reverse Current
3-404
Motorola Bipolar Power Transistor Device Data
BUX48 BUX48A
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.
]
INDUCTIVE SWITCHING
5 3 2 TC = 100C t, TIME ( s) 1 0.7 0.5 0.3 0.2 f = 5 0.1 1 2 3 7 10 20 5 IC, COLLECTOR CURRENT (AMPS) 30 50 t, TIME ( s) TC = 25C 1 0.5 0.3 0.2 0.1 TC = 25C 0.05 0.03 0.02 f = 5 0.01 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 tc tfi TC = 100C TC = 100C TC = 25C
Figure 9. Storage Time, tsv
Figure 10. Crossover and Fall Times
3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0 1
tsv
3 2 1 0.5 t, TIME ( s) tsv
TC = 25C IC = 10 A f = 5
tc tfi
0.3 0.2 0.1 0.05 tc tfi
TC = 25C IC = 10 A VBE(off) = 5 V 2 3 6 4 5 f, FORCED GAIN 7 8 9 10
0.03 0.02 0.01 0 1 2 3 4 5 Ib2/Ib1 6 7 8 9 10
Figure 11a. Turn-Off Times versus Forced Gain
Figure 11b. Turn-Off Times versus Ib2/Ib1
Motorola Bipolar Power Transistor Device Data
3-405
BUX48 BUX48A
The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. 30 IC, COLLECTOR CURRENT (AMPS) 10 5 DC 2 1 0.5 0.2 0.1 0.05 0.02 0.01 1 2 10 100 200 20 500 1000 5 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25C LIMIT ONLY FOR TURN ON tr 0.7 s 1 ms
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
w
Figure 12. Forward Bias Safe Operating Area
50 IC, COLLECTOR CURRENT (AMPS)
REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives RBSOA characteristics.
1000
40
30 BUX48 20 VBE(off) = 5 V 10 TC = 100C IC/IB1 5 0 200 400 600 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) BUX48A
0
FIgure 13. Reverse Bias Safe Operating Area
100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING
80
60 THERMAL DERATING
40
20
0
0
40
80 120 TC, CASE TEMPERATURE (C)
160
200
Figure 14. Power Derating
3-406
Motorola Bipolar Power Transistor Device Data
BUX48 BUX48A
1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.02 0.01 0.02 0.05 0.1 SINGLE PULSE RJC(t) = r(t) RJC JC = 1C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk)
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2 100 200 500 1000 2000
0.2
0.5
1
2
5 10 t, TIME (ms)
20
50
Figure 15. Thermal Response
OVERLOAD CHARACTERISTICS
100 IC, COLLECTOR CURRENT (AMPS) TC = 25C 80 BUX48A 60 tp = 10 s
OLSOA
OLSOA applies when maximum collector current is limited and known. A good example is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. Maximum allowable collector-emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drive.) Storage time of the transistor has been factored into the curve. Therefore, with bus voltage and maximum collector current known, Figure 16 defines the maximum time which can be allowed for fault detection and shutdown of base drive. OLSOA is measured in a common-base circuit (Figure 18) which allows precise definition of collector-emitter voltage and collector current. This is the same circuit that is used to measure forward-bias safe operating area.
40
BUX48
20
0
200 100 300 400 450 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 16. Rated Overload Safe Operating Area (OLSOA)
5
4 RBE = 100
IC (AMP)
3
RBE = 10 RBE = 2.2
500 F 500 V VCC Notes: * VCE = VCC + VBE * Adjust pulsed current source for desired IC, tp 10
2
1
RBE = 0
VEE
0
2
4 6 dV/dt (KV/s)
8
Figure 17. IC = f(dV/dt)
Figure 18. Overload SOA Test Circuit
Motorola Bipolar Power Transistor Device Data
3-407
BUX48 BUX48A
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
3-408
Motorola Bipolar Power Transistor Device Data
*BUX48/D*
BUX48/D

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